首页 |元器件品牌

2SD1650 [Wing Shing]

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION); 硅扩散型功率晶体管（概述）
2SD1650
型号： 2SD1650
厂家： WING SHING COMPUTER COMPONENTS    WING SHING COMPUTER COMPONENTS
描述：

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
硅扩散型功率晶体管（概述）

晶体 晶体管
文件： 总1页 (文件大小：90K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
2SD1650  
SILICON DIFFUSED POWER TRANSISTOR  
GENERAL DESCRIPTION  
Highvoltage,high-speed switching npn transistors in  
a plastic envelope with integrated efficiency diode,  
primarily for use in horizontal deflection circuites of  
colour television receivers  
QUICK REFERENCE DATA  
TO-3PML  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
Ptot  
VCEsat  
Icsat  
VF  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
3.5  
7.0  
50  
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
-
-
-
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
A
Tmb 25  
W
V
IC = 2.0A; IB = 0.4A  
f = 16KHz  
1.5  
-
A
IF = 2.0A  
2.0  
1.0  
V
Fall time  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
s
tf  
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
IB  
IBM  
Ptot  
Tstg  
Tj  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
3.5  
7.0  
1.5  
3
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
V
-
A
Collector current peak value  
Base current (DC)  
-
A
-
A
Base current peak value  
Total power dissipation  
Storage temperature  
-
-
A
Tmb 25  
50  
W
-55  
-
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
0.5  
UNIT  
mA  
Collector cut-off current  
VBE = 0V; VCE = VCESMmax  
VBE = 0V; VCE = VCESMmax  
Tj = 125  
-
-
ICE  
ICES  
1.0  
mA  
Collector-emitter sustaining voltage  
IB = 0A; IC = 100mA  
L = 25mH  
-
V
VCEOsust  
Collector-emitter saturation voltages  
Base-emitter satuation voltage  
DC current gain  
IC = 2.0A; IB = 0.4A  
IC = 2.0A; IB = 0.4A  
IC = 1A; VCE = 5V  
IF = 2.0A  
-
-
1.5  
2.0  
30  
V
V
VCEsat  
VBEsat  
hFE  
VF  
fT  
Cc  
8
Diode forward voltage  
2.0  
V
MHz  
pF  
s
Transition frequency at f = 1MHz  
Collector capacitance at f = 1MHz  
Switching times(16KHz line deflecton circuit)  
Turn-off storage time Turn-off fall time  
IC = 0.1A; VCE = 10V  
VCB = 10V  
3
100  
4.5  
1.0  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
ts  
tf  
s
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

相关型号：

2SD1650_15

 Silicon NPN Power Transistors
JMNIC

2SD1650_2015

 Silicon NPN Power Transistors
JMNIC

2SD1651

 NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT)
Wing Shing

2SD1651

 Silicon NPN Power Transistors
JMNIC

2SD1651

 Silicon NPN Power Transistors
SAVANTIC

2SD1651

 Silicon NPN Power Transistors
ISC

2SD1651C

 Color TV Horizontal Deflection Output Applications
SANYO

2SD1651_15

 Silicon NPN Power Transistors
JMNIC

2SD1651_2015

 Silicon NPN Power Transistors
JMNIC

2SD1652

 COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(WITH DAMPER DIODE)
SANYO

2SD1652

 Silicon NPN Power Transistors
SAVANTIC

2SD1653

 COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS
SANYO
©2020 ICPDF网 联系我们和版权申明